FDMS2D4N03S Datasheet, MOSFET, ON Semiconductor

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FDMS2D4N03S Features and benefits

General Description
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
* High Performance Technology for Extr.

FDMS2D4N03S Application

* Synchronous Rectifier for DC/DC Converters
* Notebook Vcore/ GPU Low Side Switch
* Networking Point of Loa.

FDMS2D4N03S Description

* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
* High Performance Technology for Extremely Low rDS(on)
* SyncFETTM Schottky Body Diode
* 100% UIL Tested
* RoHS Compliant The.

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